| 发明名称 |
Method for manufacturing a semiconductor device |
| 摘要 |
It is an object of the present invention to provide a method for manufacturing a highly reliable semiconductor device with preferable yield. In the invention, two-step etching is performed when selectively removing an interlayer insulating film with at least two layers constituting a semiconductor device, and forming an opening. One feature of the invention is that at least either one of a first gas (a first etching gas) and a second gas (a second etching gas) used at the time of the two-step etching is added with an inert gas.
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| 申请公布号 |
US2005118827(A1) |
申请公布日期 |
2005.06.02 |
| 申请号 |
US20040954340 |
申请日期 |
2004.10.01 |
| 申请人 |
SATO TOMOHIKO;MONOE SHIGEHARU;SASAGAWA SHINYA |
发明人 |
SATO TOMOHIKO;MONOE SHIGEHARU;SASAGAWA SHINYA |
| 分类号 |
H01L21/20;H01L21/311;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/417;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
| 代理机构 |
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