发明名称 |
NROM FLASH MEMORY DEVICES ON ULTRATHIN SILICON |
摘要 |
<p>An NROM flash memory cell is implemented in an ultra-thin silicon-on-insulator structure. In a planar device, the channel between the source/drain areas is normally fully depleted. An oxide layer provides an insulation layer between the source/drain areas and the gate insulator layer on top. A control gate is formed on top of the gate insulator layer. In a vertical device, an oxide pillar extends from the substrate with a source/drain area on either side of the pillar side. Epitaxidal regrowth is used to form ultra-thin silicon body regions along the sidewalk of the oxide pillar. Second source/drain areas are formed on top of this structure. The gate insulator and control gate are formed on top.</p> |
申请公布号 |
WO2005050740(A2) |
申请公布日期 |
2005.06.02 |
申请号 |
WO2004US38261 |
申请日期 |
2004.11.16 |
申请人 |
MICRON TECHNOLOGY, INC.;FORBES, LEONARD |
发明人 |
FORBES, LEONARD |
分类号 |
H01L21/28;H01L29/51;H01L29/792;H01L29/92;(IPC1-7):H01L27/115 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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