| 摘要 |
PROBLEM TO BE SOLVED: To relax a design restriction of a thyristor and to decrease an area occupied by an integrated circuit device having an ESD-protection circuit in the integrated circuit comprising the ESD-protection circuit. SOLUTION: For instance, an intermediate node of a CR integration circuit 31 is at a Vdd electric potential by the agency of a resistor element 31a with no change in power voltage from a power supply PAD11. This turns off a PMOS transistor 33d. Accordingly, a feedback loop for causing a snap back is cut off to always cut off the thyristor part 33A. COPYRIGHT: (C)2005,JPO&NCIPI |
