| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier module having improved power addition efficiency particularly under low power. SOLUTION: The high-frequency power amplifier module is provided with MOS transistors QN31, QN32 and QN33 which are connected in parallel to a signal output terminal Pout and have device sizes of QN31>QN32>QN33, and a bias circuit 1c for applying bias voltages Vg31, Vg32 and Vg33 of the MOS transistors QN31, QN32, QN33 so as to be Vg31<Vg32<Vg33. COPYRIGHT: (C)2005,JPO&NCIPI
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