| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a split-gate semiconductor memory device. SOLUTION: A gate insulating film 205 and conductive layer are formed on a semiconductor substrate 200. A mask pattern, defining a first opening portion, is formed on the conductive layer. The conductive layer exposed on the opening portion is thermally oxidized to form between-gate oxide films 220. A portion between the between-gate oxide films of the mask pattern is removed to form a spacer on a inner wall of a second opening portion. With the mask pattern, spacer, and between-gate oxide film as masks, the conductive layer is etched, impurity ions are implanted in a defined third opening portion, and a source region 245 is formed. A insulating film plug 250 is formed in the third opening portion. The mask pattern and spacer are removed to expose the sidewall of the insulating film plug. A tunnel insulating film 260 is formed on a sidewall of a floating gate 210, which is formed by etching the conductive layer with the between-gate oxide film as the mask. A drain region 275 is formed outside a control gate 270 which is formed on the sidewall of the insulating film plug 250 by a self alignment method. COPYRIGHT: (C)2005,JPO&NCIPI
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