| 摘要 |
PROBLEM TO BE SOLVED: To provide a mos transistor and its manufacturing method that prevent current leak, can secure larger process margin at the time of adjusting an off-current, and realize a more stable element by the same width between gate lines as the conventional one. SOLUTION: An epitaxial layer is arranged between a silicon wafer and a gate electrode. An impurity region containing a source and a drain is formed of an ultra-low concentration impurity region formed on the epitaxial layer, a low concentration impurity region formed on the silicon wafer, and a high concentration impurity region (source and drain region). COPYRIGHT: (C)2005,JPO&NCIPI
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