Film forming method

摘要

CVD is performed without damaging a micro-fabricated semiconductor element. An organic material gas containing amine is used as deposition material gas ( 6 ). The material gas ( 6 ) is introduced into a vacuum chamber ( 3 ) and ultraviolet light radiated from each of lamps ( 2 ) is applied onto an object ( 5 ) to be processed placed in the chamber ( 3 ), thereby causing chemical vapor deposition to be carried out, whereby a film is grown at a temperature that no damage is given to a semiconductor element or the like of the object ( 5 ).