Semiconductor devices with capacitors of metal/insulator/metal structure and methods for forming the same

摘要

Semiconductor devices with copper interconnections and MIM capacitors and methods of fabricating the same are provided. The device includes a lower electrode composed of a first copper layer. A first insulation layer covers a lower electrode. A window is formed in the first insulation layer to expose a portion of the lower electrode. A capacitor includes a lower barrier electrode, a dielectric layer, and an upper barrier electrode, which are sequentially formed to cover a sidewall and a bottom of the window. An intermediate electrode composed of a second copper layer fills a remaining space of an inside of the capacitor. A second insulation layer is formed on the intermediate electrode. A connection hole is formed in the second insulation layer to expose a portion of the intermediate electrode. A connection contact plug composed of a third copper layer fills the connection hole. An upper layer composed of a fourth copper layer is formed on the connection contact plug to be connected to the connection contact plug.