发明名称 MOS field effect transistor with small miller capacitance
摘要 A MOS field effect transistor having a vertical source, drain and gate structure, the gate electrode of which has a dimensioning that determines the gate-drain capacitance (Miller capacitance) and provides a reduced capacitance.
申请公布号 US2005116298(A1) 申请公布日期 2005.06.02
申请号 US20040981946 申请日期 2004.11.05
申请人 TIHANYI JENOE 发明人 TIHANYI JENOE
分类号 H01L21/28;H01L21/336;H01L29/06;H01L29/423;H01L29/49;H01L29/76;H01L29/78;(IPC1-7):H01L29/76 主分类号 H01L21/28
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