| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer for an HBT of the structure that a base resistance can be reduced by improving the mobility of a p-type carrier. SOLUTION: A compound semiconductor epitaxial wafer includes the hetero junction bipolar transistor structure that an n-type collector layer 3, a base layer 4 made of a p-type GaAs-based semiconductor, and an emitter layer 5 made of an n-type InGaP or AlGaAs are sequentially laminated. A quantum well region 14b made of a semiconductor having a smaller band gap is selectively formed in the flat surface of the base layer 4, and a two-dimensional hole gas of p-type carrier is generated in the quantum well. COPYRIGHT: (C)2005,JPO&NCIPI
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