| 摘要 |
PROBLEM TO BE SOLVED: To alleviate the level difference of an element isolation insulating film disposed along a scribing region. SOLUTION: In a method for manufacturing a semiconductor device, when the gate electrodes 4a, 4b disposed on an element forming region R1 are formed, the gate electrode 4b disposed on the end of the element isolation insulating film 2 facing the scribing region R3 is formed, and then a lower layer seal ring 12b and an upper layer seal ring 14b are formed which are disposed along the element isolation insulating film 2 of the outermost periphery of the element forming region R1. COPYRIGHT: (C)2005,JPO&NCIPI
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