| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of a magnetoresistance effect device by improving the crystallinity and orientation property of a film constituting a MR element. SOLUTION: The magnetoresistance effect device is provided with a first shielding layer 3 and a second shield layer 8 arranged separating by the prescribed interval, a MR element 5 arranged between the first shielding layer 3 and a second shielding layer 8, and a substrate 4 arranged between first shielding layer 3 and a MR element 5. The substrate 4, the MR element 5, and the second shielding layer 8 is laminated on the first shielding layer 3. The substrate includes a first layer 4a, of which the lower plane makes contact directly with the first shielding layer 3 and a second layer 4 of which the lower plane contacts to an upper plane of the first layer 4a and the upper plane makes contact directly with the MR element 5. At least one kind from among Ta, Ti, W, Hf, Y is included as a material of the first layer 4a. The material for the second layer 4b is an alloy containing Ni and Cr. COPYRIGHT: (C)2005,JPO&NCIPI
|
