发明名称 |
Method for treating exhaust gas |
摘要 |
Exhaust gas containing fluorine gas or halogen fluoride gas emitted from etching or cleaning steps is burned in a combustion chamber having a fluoride passivation film formed on its surface. It is possible to treat exhaust gas emitted from semiconductor fabrication processes which contains fluorine gas or halogen fluoride gas in high concentrations or large volumes, while abatement treatment can be accomplished safely and efficiently with less energy usage.
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申请公布号 |
US2005115674(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20030474765 |
申请日期 |
2003.10.10 |
申请人 |
TAGUCHI HIROYASU;HOSHINO YASUYUKI;PARK BYOUNG-SUP;JIN BINGZHE |
发明人 |
TAGUCHI HIROYASU;HOSHINO YASUYUKI;PARK BYOUNG-SUP;JIN BINGZHE |
分类号 |
B01D53/68;F23G7/06;H01L21/302;(IPC1-7):C23F1/00;C23F1/00;F23M5/00 |
主分类号 |
B01D53/68 |
代理机构 |
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代理人 |
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地址 |
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