发明名称 Method for treating exhaust gas
摘要 Exhaust gas containing fluorine gas or halogen fluoride gas emitted from etching or cleaning steps is burned in a combustion chamber having a fluoride passivation film formed on its surface. It is possible to treat exhaust gas emitted from semiconductor fabrication processes which contains fluorine gas or halogen fluoride gas in high concentrations or large volumes, while abatement treatment can be accomplished safely and efficiently with less energy usage.
申请公布号 US2005115674(A1) 申请公布日期 2005.06.02
申请号 US20030474765 申请日期 2003.10.10
申请人 TAGUCHI HIROYASU;HOSHINO YASUYUKI;PARK BYOUNG-SUP;JIN BINGZHE 发明人 TAGUCHI HIROYASU;HOSHINO YASUYUKI;PARK BYOUNG-SUP;JIN BINGZHE
分类号 B01D53/68;F23G7/06;H01L21/302;(IPC1-7):C23F1/00;C23F1/00;F23M5/00 主分类号 B01D53/68
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