| 摘要 |
PROBLEM TO BE SOLVED: To enhance a light-emitting device provided with a gallium nitride compound semiconductor thin film in light-emitting properties by a method, wherein a buffer layer and the gallium nitride compound semiconductor thin film are improved in evenness. SOLUTION: A light-emitting device is composed of a substrate 1, a buffer layer 2 of Al1-x Inx N (0<x<1) formed on the substrate 1, an n-type gallium nitride compound semiconductor thin film 3 formed on the buffer layer 2, and a p-type gallium nitride compound semiconductor thin film 5 formed on the n-type gallium nitride compound semiconductor thin film 3. |
