| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a modulator integrated semiconductor laser which modulates the laser beam over a wide temperature range. <P>SOLUTION: In the modulator integrated semiconductor laser 1, a first and a second EA modulator 121, 122 and a laser diode 110 are accumulated monolithically. The first and the second EA modulators are connected in series with one end of the laser diode. These EA modulators have absorption edge wavelength shorter than oscillation wavelength of the laser diode. The absorption edge wavelength of the second EA modulator is longer than the absorption edge of the first EA modulator. These EA modulators modulate the laser beam in mutually different temperature ranges. As a result, the modulator integration laser can modulate the laser beam over a wide temperature range. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
