| 摘要 |
A wafer of germanium, silicon, or germanium-silicon alloy is halogenated and then treated with a reactive alkylating agent. In a typical example a germanium wafer including a PN junction, after etching in a saturated solution of oxalic acid in hydrogen peroxide, is heated first in pure argon or nitrogen and then at 85 DEG C. for 10 minutes in a flow of equal volumes of hydrogen chloride and chlorine or hydrogen bromide and bromine. After repeating these steps and cooling in inert gas the wafer is immersed in ethyl magnesium bromide, lithium ethyl, propyl or butyl, or butyl magnesium bromide. Finally it is rinsed in ammonium chloride or acetic acid. In treating silicon and germanium-silico alloy butyl magnesium bromide and isopropyl magnesium bromide respectively are used as alkylating agents. |
