发明名称 Semiconductor integrated circuit
摘要 In a semiconductor integrated circuit, respective semiconductor circuits are disposed in different regions partitioned in accordance with their operation probabilities per unit time, and a supply voltage and a threshold voltage are correlatively controlled in each region. A target value for controlling the threshold voltage is determined in accordance with the operation probability of the semiconductor circuit. A threshold voltage control circuit controls substrate voltages of p-type and n-type MOS transistors included in the semiconductor circuit so that the threshold voltage can be constant at the target value regardless of the temperature change occurring in use. Simultaneously, a supply voltage control circuit controls the supply voltage for the semiconductor circuit so that an objective operating frequency can be attained. As a result, a semiconductor integrated circuit with low power consumption can be obtained.
申请公布号 US2005116765(A1) 申请公布日期 2005.06.02
申请号 US20040994552 申请日期 2004.11.23
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SAKIYAMA SHIRO;KINOSHITA MASAYOSHI;SUMITA MASAYA
分类号 H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H03K5/00;H03K5/13;H03K19/00;H03K19/094;(IPC1-7):H03K3/037 主分类号 H01L21/822
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