发明名称 |
Semiconductor integrated circuit |
摘要 |
In a semiconductor integrated circuit, respective semiconductor circuits are disposed in different regions partitioned in accordance with their operation probabilities per unit time, and a supply voltage and a threshold voltage are correlatively controlled in each region. A target value for controlling the threshold voltage is determined in accordance with the operation probability of the semiconductor circuit. A threshold voltage control circuit controls substrate voltages of p-type and n-type MOS transistors included in the semiconductor circuit so that the threshold voltage can be constant at the target value regardless of the temperature change occurring in use. Simultaneously, a supply voltage control circuit controls the supply voltage for the semiconductor circuit so that an objective operating frequency can be attained. As a result, a semiconductor integrated circuit with low power consumption can be obtained.
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申请公布号 |
US2005116765(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20040994552 |
申请日期 |
2004.11.23 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SAKIYAMA SHIRO;KINOSHITA MASAYOSHI;SUMITA MASAYA |
分类号 |
H01L21/822;H01L21/8234;H01L27/04;H01L27/088;H03K5/00;H03K5/13;H03K19/00;H03K19/094;(IPC1-7):H03K3/037 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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