| 摘要 |
A semiconductor component suitable for use as a power semiconductor component and method of making a semiconductor component is disclosed. In one embodiment, the semiconductor component includes a semiconductor body having a first surface, a second surface, a third surface, a first conduction type region and a second conduction type region adjoining the first conduction type region at the third surface. A trench extending from the first surface into the semiconductor body, the trench defined by a trench bottom and an arcuately shaped sidewall.
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