Semiconductor light-emitting device

摘要

A semiconductor light-emitting device fabricated in a nitride material system has an active region ( 5 ) disposed over a substrate ( 1 ). The active region ( 5 ) comprises a first aluminium-containing layer ( 12 ) forming the lowermost layer of the active region, a second aluminium-containing layer ( 14 ) forming the uppermost layer of the active region, and at least one InGaN quantum well layer ( 13 ) disposed between the first aluminium-containing layer ( 12 ) and the second aluminum-containing layer ( 14 ). The aluminium-containing layers ( 12,14 ) provide improved carrier confinement in the active region ( 5 ), and so increase the output optical power of the device. The invention may be applied to a light-emitting diode ( 11 ) or to a laser diode.