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发明名称
外延生长层制造方法(一) A METHOD OF FABRICATING AN EPITAXIALLY GROWN LAYER
摘要
本发明系关于一种制造外延生长层的方法,亦即,外延生长层经由外延(epitaxy)所得,特别应用于光学、光电或电子领域中。
申请公布号
TW200517532
申请公布日期
2005.06.01
申请号
TW093122170
申请日期
2004.07.23
申请人
斯欧埃技术公司
发明人
法布鲁;狄希欧
分类号
C30B25/02
主分类号
C30B25/02
代理机构
代理人
黄庆源;蔡中曾
主权项
地址
法国
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