发明名称 |
METHOD FOR FORMING INDUCTOR OF SEMICONDUCTOR DEVICE |
摘要 |
Disclosed is a method for forming an inductor of a semiconductor device. The method includes the steps of forming an inductor pattern in an insulation layer after forming the insulation layer on a lower layer pattern, forming a barrier metal layer on a surface of the insulation layer including the inductor pattern, forming a copper thin film on the barrier metal layer by a thickness enough to fill the inductor pattern with the copper thin film, planarizing the copper thin film through a planar process by using slurry providing a high polishing rate identical to or more than 10,000 Å/min, and removing the barrier metal layer from the insulation layer through the planar process using slurry capable of polishing a barrier metal. Since slurry providing the high polishing rate is used, copper is polished at a high polishing rate under a conventional polishing condition or a low polishing pressure condition. |
申请公布号 |
KR20050050703(A) |
申请公布日期 |
2005.06.01 |
申请号 |
KR20030084303 |
申请日期 |
2003.11.26 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
KIM, HYUNG JUN;KANG, YOUNG SOO |
分类号 |
C09K3/14;H01L21/00;H01L21/02;H01L21/20;H01L21/304;H01L21/3205;H01L21/321;H01L21/768;H01L23/522;H01L27/04;(IPC1-7):H01L27/04 |
主分类号 |
C09K3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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