| 摘要 |
PROBLEM TO BE SOLVED: To utilize a manufacturing step for LSIs and provide a stable void gate structure, concerning a unipolar transistor and a semiconductor integrated circuit device. SOLUTION: At least an area on the side of a gate insulating film 2 in a gate electrode area of a unipolar transistor is formed as a void region 4 that is closed in four directions along the channel width direction. COPYRIGHT: (C)2005,JPO&NCIPI
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