发明名称 On-wafer monitoring system
摘要 An on-wafer monitoring system ( 200 ) is placed at a position of a substrate to be treated in a plasma treatment device ( 100 ). The on-wafer monitoring system ( 200 ) includes various sensors, a data I/O unit ( 210 ) for optically inputting/outputting data to/from outside, and an internal power source unit ( 250 ) for supplying power to them. The on-wafer data I/O unit ( 210 ) is connected to a laser diode (LD) ( 320 ) and a photo diode (PD) ( 330 ) which are optical I/O units installed outside. The data I/O unit ( 210 ) receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer ( 400 ), a VUV photon detector ( 500 ), and a radical ion species emission spectrophotometer ( 600 ).
申请公布号 US2005115673(A1) 申请公布日期 2005.06.02
申请号 US20040501351 申请日期 2004.07.14
申请人 SAMUKAWA SEIJI;SHINMURA TADASHI;OKIGAWA MITSURU 发明人 SAMUKAWA SEIJI;SHINMURA TADASHI;OKIGAWA MITSURU
分类号 H05H1/00;H01L21/306;H01L21/3065;H01L23/544;(IPC1-7):H01L21/306 主分类号 H05H1/00
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