| 摘要 |
<p>A high purity hafnium, characterized in that it has a purity of 4N or higher, with the exception of zirconium and gas components, and has an oxygen content of 40 wt ppm or less; a target and thin film comprising the high purity hafnium; a high purity hafnium, characterized in that it has a purity of 4N or higher, with the exception of zirconium and gas components, and has both of a sulfur content and a phosphorus content of 10 wt ppm or less; a target and thin film comprising the high purity hafnium; a high purity hafnium material which is prepared by the use of a hafnium sponge having been reduced in the content of zirconium as a raw material and is further reduced in the contents of oxygen, sulfur and phosphorus; a target and thin film comprising the high purity hafnium material; and a method for producing a high purity hafnium. An efficient and stable production technique, a high purity hafnium material prepared by the technique, and a target and a thin film comprising said material are provided.</p> |
