ALGAOMAS STRAOMED MQW LASER DIODE

摘要

The invention is a laser diode with improved slope efficiency and decreased threshold current. The diode laser produces light at IR-region of the radiation spectrum. It comprises two cladding layers of opposite conductivity types on opposite sides of an active layer. The active layer has at least eight compressively strained AlGaInAs quantum wells and at least seven AlGaInAs barrier layers placed between the quantum wells. The benefits of the invention are related to the improved temperature behavior of laser diodes. A laser diode such as disclosed herein has reduced threshold current and better slope efficiency at higher operating temperatures up to 85 C. Due to better temperature behavior the laser diodes can be utilized in equipments without active cooling.