| 摘要 |
<P>PROBLEM TO BE SOLVED: To accurately form a pattern even in an area being out of periodicity of a pattern. <P>SOLUTION: A first photomask having a real pattern corresponding to the pattern to be actually formed in a film to be processed and having a dummy pattern added to control the pattern pitch in the photomask to a specified range is used together with a second photomask having a pattern which discriminates a region where the real pattern is formed from a region where the dummy pattern is formed. On forming a pattern, the film to be processed is formed on a substrate, a first mask is formed on the film by lithography using the first photomask, and then a second mask is formed on the film by lithography using the second mask. Then the film to be processed is etched through the first and second masks to form the pattern. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
