| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that can be improved in device characteristics, such as service life and reliability. SOLUTION: A current-constricting layer 18 has an unoxidized region 18A composed of AlAs etc., corresponding to the current-injecting region 15A of an active layer 15 and oxidized areas 18B composed of an aluminum oxide corresponding to the non-current injecting regions 15B of the active layer 15. The oxidized region 18B are formed, by oxidizing parts of an unoxidized layer composed of AlAs etc. at a temperature of≥240°C and <375°C, after the unoxidized layer is formed. The preferred thicknesses of the oxidized areas 18B are 10-1,000 nm. The preferred width of the oxidized region 18B on one side is≥1 time or≤7 times as large as the width of the unoxidized region 18A. In addition, the preferred distance between the current-constricting layer 18 and active layer 15 is≥50 nm or≤500 nm. More preferably, the distance between the layers 18 and 15 is≥180 nm. COPYRIGHT: (C)2005,JPO&NCIPI
|
