SURFACE TREATMENT METHOD OF SILICON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To carry out both cleaning of a silicon (001) surface and flattening in monoatomic order at a temperature lower that a conventionally known temperature. SOLUTION: A silicon substrate 1 where an oxide film 2 is formed in a (001) surface is treated by a hydrogen fluoride water solution comprising a hydroxide ion reducer (hydrochloric acid, for example) and the oxide film 2 is peeled äFig.(c)}. The silicon substrate is subjected to a heating treatment in a gas comprising hydrogen äFig.(d)}. COPYRIGHT: (C)2005,JPO&NCIPI