| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which a plated seed layer can be formed without using a sputtering method. SOLUTION: The method of manufacturing semiconductor device includes a step of forming an insulating film 10 on first conductive layers 4 and 7, a step of forming connection holes 10a and 10b through the insulating film 10 in the portions of the film 10 overlapping the first conductive layer 7, and a step of forming the plated seed layer 13 by applying conductive paste to the surface of the insulating film 10 and the bottom faces and side faces of the connection holes 10a and 10b and drying the paste. The method also includes a step of forming a second conductive layer 14 on the plated seed layer 13 by electroplating or electroless plating, and a step of forming wiring 14a and 14b connected to the first conductive layers 4 and 7 by removing the second conductive layer 14 and plated seed layer 13 from at least a portion on the insulating film 10. COPYRIGHT: (C)2005,JPO&NCIPI
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