METHOD FOR FORMING MULTILAYER RESIST

摘要

Disclosed is a method for forming a multilayer resist having sufficient antireflection effect in a photolithography process wherein light in the vacuum ultraviolet range is utilized, and sufficient development characteristics in a developing process. The method for forming a multilayer resist comprising a step (I) for forming a photoresist layer (L1) on a substrate, and a step (II) for forming an antireflective layer (L2) on the photoresist layer (L1) by applying thereto a coating composition containing a fluorine-containing polymer (A) having a hydrophilic group Y, is characterized in that the fluorine-containing polymer (A) has a structural unit derived from a fluorine-containing ethylenic monomer having a hydrophilic group Y, and further characterized in that (i) a hydrophilic group Y of the fluorine-containing polymer (A) contains an acidic OH group having a pKa of not more than 11, (ii) the fluorine content of the fluorine-containing polymer (A) is not less than 50 mass%, and (iii) the mole number of the hydrophilic group Y in 100g of the fluorine-containing polymer (A) is not less than 0.14.