| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an insulated-gate semiconductor device in which high breakdown voltage and low on-state resistance are realized and which can easily be manufactured, and to provide a manufacturing method of the device. <P>SOLUTION: The semiconductor device 300 is provided with an n<SP>+</SP>source region 31, an n<SP>+</SP>drain region 11, a p<SP>-</SP>body region 41 and an n<SP>-</SP>drift region 12. Trenches 21 and 25 formed by digging a part of an upper face side of the semiconductor device 300 are installed. A gate electrode 22 is incorporated in the trench 21. Depth differs in the trench 21 and the trench 25. A P floating region 51 is arranged below the trench 21 and a P floating region 54 below the trench 25. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
