发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 The semiconductor device fabrication method of the present invention includes forming metal wirings on a semiconductor substrate, forming a first blocking layer on the semiconductor substrate and the metal wiring, forming a first FSG on the first blocking layer, forming a second blocking layer on the first FSG, forming a second FSG on the second blocking layer, and forming a protection layer on the second FSG.
申请公布号 KR20050050875(A) 申请公布日期 2005.06.01
申请号 KR20030084525 申请日期 2003.11.26
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 KIM, RAE SUNG
分类号 H01L21/316;H01L21/768;H01L23/532;(IPC1-7):H01L21/316 主分类号 H01L21/316
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