发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
According to the present invention, there is a provided a semiconductor device fabrication method having, forming a mask material in a surface portion of a semiconductor substrate, and forming a step having a projection by using the mask material; forming a dielectric film on the semiconductor substrate so as to fill the step and planarize an entire surface; annealing the dielectric film; etching back the dielectric film such that a surface of the dielectric film is positioned between upper and lower surfaces of the mask material; and removing the mask material to expose a surface of the projection of the semiconductor substrate.
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申请公布号 |
US2005116300(A1) |
申请公布日期 |
2005.06.02 |
申请号 |
US20040804159 |
申请日期 |
2004.03.19 |
申请人 |
HIEDA KATSUHIKO;KIYOTOSHI MASAHIRO |
发明人 |
HIEDA KATSUHIKO;KIYOTOSHI MASAHIRO |
分类号 |
H01L21/76;H01L21/312;H01L21/314;H01L21/316;H01L21/335;H01L21/762;H01L27/08;(IPC1-7):H01L21/335 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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