发明名称 |
Thin film transistor with tapered edges |
摘要 |
A thin film transistor according to the present invention may include a gate insulating layer; and a lower pattern placed below the gate insulating layer to contact therewith and having an edge with a taper angle of at most about 80 DEG . With this design, dielectric strength of the gate insulating layer can be enhanced. The lower pattern can be a gate electrode layer. |
申请公布号 |
EP1536482(A1) |
申请公布日期 |
2005.06.01 |
申请号 |
EP20040090476 |
申请日期 |
2004.11.29 |
申请人 |
SAMSUNG SDI CO., LTD. |
发明人 |
HWAN, EUI-HUN;LEE, SANG-GUL;KIM, DEUK-JONG |
分类号 |
H01L21/336;H01L29/423;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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