| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a dividing method of a semiconductor wafer capable of dividing by streets a semiconductor wafer formed by comparing a semiconductor chip including a laminate composed of an insulating film and a function film both formed on the surface thereof into individual semiconductor chips along the streets without peeling the laminate. <P>SOLUTION: The dividing method, when dividing the semiconductor wafer into individual semiconductor chips by cutting it along the streets with a cutting blade, comprises a first processed groove forming process of forming a pair of first laser processed grooves 241 in the laminate 21, by irradiating a first laser light beam on the streets at an interval wider than the width of the cutting blade; a second processed groove forming process of forming a second laser processed groove 242 extending to the semiconductor substrate, by irradiating a second laser light beam on the laminate in a region wider than the width of the cutting blade between both outsides of the pair of the first laser processed grooves on the streets; and a cutting process of cutting the semiconductor substrate along the second laser processed groove with the cutting blade. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
