| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which uses, for an interlayer insulation film, a material having a low dielectric constant which can prevent the diffusion of an interconnection material, such as a barrier metal and Cu, and to provide its manufacturing method. <P>SOLUTION: The semiconductor device comprises a substrate made of a semiconductor and an interconnection structure formed on the substrate. The interconnection structure includes a porous insulation film wherein the volume dominated by such pores that have a diameter of 0.6 nm or larger is 30% or lower, and a current-carrying portion formed of a conductor mainly made of metal. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
