| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photomask in which changes in device dimensions due to an optical proximity effect in a photolithographic process is prevented when patterns are spaced at a constant distance and the layout area of an integrated circuit is decreased. <P>SOLUTION: Device patterns corrected by minute dimensions from each other are formed on a photomask and transferred onto a substrate to obtain optical proximity characteristic curves 404, 405 and 406 of the pattern dimensions. From the pattern spaces a to e as the intersections of the above curves and an aimed design finish dimension 402, a space which minimizes the layout area of an integrated circuit is selected and adopted to form an integrated circuit pattern on a photomask. Thus, changes in a pattern due to an optical proximity effect can be eliminated even when gate electrodes or the like are closely arranged, and circuit layout can be made in a small area. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
