发明名称 NONVOLATILE MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To detect a defective memory cell having deteriorated memory performance quickly and accurately. <P>SOLUTION: A binary-data determination section 26 performs the H/L level determination according to determination results of an access determination section 20, using a level that is offset higher or lower from a central value of H/L levels as a threshold value when that reading access is reading from a first memory area 16a, on the other hand, using an approximately central value of the H/L levels as the threshold value when it is reading from a second memory area 16b. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005141864(A) 申请公布日期 2005.06.02
申请号 JP20030379049 申请日期 2003.11.07
申请人 SANYO ELECTRIC CO LTD 发明人 MORISHITA NAOTO
分类号 G11C16/02;G11C16/06;G11C29/00;G11C29/50;(IPC1-7):G11C16/02 主分类号 G11C16/02
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