发明名称 Method of manufacturing a solid state image sensing device
摘要 The reliability and production yield of a solid state image sensing device is improved. Over a surface of a wiring substrate, a sensor chip and a lens-barrel having the sensor chip housed therein are mounted. To the lens-barrel, a lens holder for retaining a lens is connected. Over a back surface of the wiring substrate, a logic chip, a memory chip and a passive part are mounted, and they are sealed with a sealing resin. The lens-barrel and lens holder are each threaded. They are thermally welded while the threads are fitted to each other. The passive part is bonded to the wiring substrate via a Sn-Ag type Pb-free solder. After the wiring substrate is subjected to plasma washing treatment, the sensor chip is mounted over the wiring substrate and an electrode pad of the sensor chip and an electrode of the wiring substrate are electrically connected via a bonding wire.
申请公布号 US2005116138(A1) 申请公布日期 2005.06.02
申请号 US20040946035 申请日期 2004.09.22
申请人 HANADA KENJI;NAKANISHI MASAKI;SHIGEMURA KUNIO;NISHI TAKAOMI;SHIDA KOJI;TEZUKA IZUMI;ABE SHUNICHI;TOMITA YOSHIHIRO;SEINO MITSUAKI;KOMATSU TOHRU 发明人 HANADA KENJI;NAKANISHI MASAKI;SHIGEMURA KUNIO;NISHI TAKAOMI;SHIDA KOJI;TEZUKA IZUMI;ABE SHUNICHI;TOMITA YOSHIHIRO;SEINO MITSUAKI;KOMATSU TOHRU
分类号 G02B7/02;G01J1/00;H01J40/14;H01L21/76;H01L27/00;H01L27/14;H04N5/225;H04N5/335;(IPC1-7):G01J1/00 主分类号 G02B7/02
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