发明名称 |
Memory device and storage apparatus |
摘要 |
<p>A memory device 10 has an arrangement in which a memory thin film 4 is sandwiched between first and second electrodes 2 and 6, the memory thin film 6 contains at least rare earth elements, the memory thin film 4 or a layer 3 in contact with the memory thin film 4 contains any one of elements selected from Cu, Ag, Zn and the memory thin film 4 or the layer 3 in contact with the memory thin film 4 contains any one of elements selected from Te, S, Se. The memory device can record and read information with ease stably, and this memory device can be manufactured easily by a relatively simple manufacturing method. <IMAGE></p> |
申请公布号 |
EP1536474(A2) |
申请公布日期 |
2005.06.01 |
申请号 |
EP20040028129 |
申请日期 |
2004.11.26 |
申请人 |
SONY CORPORATION |
发明人 |
ARATANI, KATSUHISA;MAESAKA, AKIHIRO;KOUCHIYAMA, AKIRA;TSUSHIMA, TOMOHITO |
分类号 |
H01L27/105;G11C11/00;G11C13/02;H01L21/105;H01L21/8247;H01L27/10;H01L27/115;H01L27/24;H01L45/00;(IPC1-7):H01L27/10 |
主分类号 |
H01L27/105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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