Semiconductor device and method of manufacture

摘要

In a semiconductor manufacturing method, an emitter region ( 211 ) and a base enhancement region ( 207 ) are formed to provide linear voltage, capacitance and low resistance characteristics. In the manufacturing method, a semiconductor device ( 200 ) is formed on a silicon substrate layer ( 101 ) with an epitaxial layer ( 203 ). Trenches ( 233 ) are cut into the epitaxial layer ( 203 ) and filled with oxide ( 601 ) to provide reduced junction capacitance and reduced base resistance. The emitter region ( 211 ) and the base enhancement region ( 207 ) are simultaneously formed through an anneal process.