发明名称 |
Method for preventing contact defects in interlayer dielectric layer |
摘要 |
A method of forming an interlayer dielectric (ILD) layer. A dielectric layer containing boron and phosphorous is formed overlying a substrate. A plasma treatment is subsequently performed on the dielectric layer using argon or nitrogen as a process gas. A capping layer is formed in-situ overlying the dielectric layer to serve as the ILD layer with the dielectric layer. A reflow process is subsequently performed on the ILD layer. A method for preventing formation of etching defects in a contact is also disclosed.
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申请公布号 |
US6900118(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20030727966 |
申请日期 |
2003.12.04 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
TZOU KAAN-LU;CHEN YAN-HONG;CHEN YI-NAN;WU CHANG-RONG |
分类号 |
H01L21/3105;H01L21/316;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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