发明名称 |
Nitride semiconductor light-emitting device |
摘要 |
A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided in contact with one surface of the active layer. A second p-type clad layer made of a p-type nitride semiconductor containing aluminum and gallium is provided on the first p-type clad layer. The second p-type clad layer has a larger band gap than that of the first p-type clad layer. An n-type semiconductor layer is provided in contact with the other surface of the active layer.
|
申请公布号 |
US6900465(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20010809038 |
申请日期 |
2001.03.16 |
申请人 |
NICHIA CORPORATION |
发明人 |
NAKAMURA SHUJI;NAGAHAMA SHINICHI;IWASA NARUHITO;KIYOKU HIROYUKI |
分类号 |
H01L33/06;H01L33/32;(IPC1-7):H01L27/15 |
主分类号 |
H01L33/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|