发明名称 |
Surface engineering to prevent epi growth on gate poly during selective epi processing |
摘要 |
The present invention provides a method of formed a nitrided surface layer atop a polysilicon gate electrode that inhibits the growth of an epi silicon layer thereon. Specifically, the method of the present invention includes the steps of: forming a polysilicon layer atop a gate dielectric layer, forming a nitrided surface layer on the polysilicon layer; selectively removing portions of the nitrided surface layer and the polysilicon layer stopping on the gate dielectric layer, while leaving a patterned stack of the nitrided surface layer and the polysilicon layer on the gate dielectric layer; forming sidewall spacers on at least exposed vertical sidewalls of polysilicon layer; removing portions of the gate dielectric layer not protected by the sidewall spacers; and growing an epi silicon layer on exposed horizontal surfaces of an underlying semiconductor substrate.
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申请公布号 |
US6900092(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20020183336 |
申请日期 |
2002.06.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AJMERA ATUL C.;SCHEPIS DOMINIC J.;STEIGERWALT MICHAEL D. |
分类号 |
H01L21/20;H01L21/336;H01L29/78;(IPC1-7):H01L21/823;H01L21/320;H01L21/31 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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