发明名称 |
High voltage switch circuitry |
摘要 |
The present invention relates to a high voltage switch used with a one-time programmable memory device and a method of setting a state of a one-time programmable memory device using such a high voltage switch. The memory device includes a plurality of one time programmable memory cells arranged in an array and adapted to be programmed using a high voltage, wherein each of the memory cells includes at least one storage element and two gated fuses connected to the storage element. A high voltage switch is connected to at least one of the memory cells and is adapted to switch in a high voltage.
|
申请公布号 |
US6901004(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20040856117 |
申请日期 |
2004.05.28 |
申请人 |
BROADCOM CORPORATION |
发明人 |
SMITH DOUGLAS D.;BUER MYRON;RADIEDDINE BASSEM |
分类号 |
G11C17/16;H01L23/525;(IPC1-7):G11C11/00 |
主分类号 |
G11C17/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|