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发明名称
METHOD FOR FORMING GATE OF MOS TRANSISTOR
摘要
申请公布号
KR20050050191(A)
申请公布日期
2005.05.31
申请号
KR20030083876
申请日期
2003.11.25
申请人
DONGBUANAM SEMICONDUCTOR INC.
发明人
PARK, GO
分类号
(IPC1-7):H01L21/336
主分类号
(IPC1-7):H01L21/336
代理机构
代理人
主权项
地址
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