发明名称 |
Strained silicon MOSFETs having improved thermal dissipation |
摘要 |
The thermal conductivity of strained silicon MOSFETs and strained silicon SOI MOSFETs is improved by providing a silicon germanium carbide thermal dissipation layer beneath a silicon germanium layer on which strained silicon is grown. The silicon germanium carbide thermal dissipation layer has a higher thermal conductivity than silicon germanium, thus providing more efficient removal of thermal energy generated in active regions.
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申请公布号 |
US6900143(B1) |
申请公布日期 |
2005.05.31 |
申请号 |
US20030658963 |
申请日期 |
2003.09.09 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PAN JAMES N.;GOO JUNG-SUK;XIANG QI |
分类号 |
H01L21/285;H01L21/336;H01L21/461;H01L29/10;H01L29/78;(IPC1-7):H01L21/461 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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