| 发明名称 |
Chemical mechanical polishing (CMP) process using fixed abrasive pads |
| 摘要 |
A semiconductive wafer having a layer of conductive material formed thereon is polished. The semiconductor wafer is rotated against an abrasive polishing pad. A solution is applied to the semiconductor wafer and to the abrasive polishing pad. The solution includes an etchant of the conductive material.
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| 申请公布号 |
US6899597(B2) |
申请公布日期 |
2005.05.31 |
| 申请号 |
US20030353733 |
申请日期 |
2003.01.29 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
WRSCHKA PETER;SIMPSON ALEXANDER |
| 分类号 |
B24B37/04;H01L21/321;H01L21/768;(IPC1-7):B24B1/00 |
主分类号 |
B24B37/04 |
| 代理机构 |
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