| 发明名称 |
Semiconductor element and manufacturing method thereof |
| 摘要 |
A semiconductor element includes a substrate and a first DMOS element formed on a first portion of the substrate. The DMOS element includes a gate electrode that is formed to have slanted side walls. The semiconductor element also includes a first MOS element formed on a second portion of the substrate that is separate from the first portion.
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| 申请公布号 |
US6900520(B2) |
申请公布日期 |
2005.05.31 |
| 申请号 |
US20010045350 |
申请日期 |
2001.11.09 |
| 申请人 |
FAIRCHILD KOREA SEMICONDUCTOR LTD. |
发明人 |
LEE SUK-KYUN |
| 分类号 |
H01L21/336;H01L21/8234;H01L21/8249;H01L27/06;H01L27/088;H01L27/092;H01L29/08;H01L29/423;H01L29/78;(IPC1-7):G01L29/861 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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