发明名称 |
Apparatus and method for measuring dose and energy of ion implantation by employing reflective optics |
摘要 |
This invention discloses an apparatus for measuring an ion-implantation ion energy and/or dosage. The apparatus includes a scanning densitometer for measuring a reflected light from a monitor substrate. The apparatus further uses a monitor substrate. A thin film is supported on the monitor substrate wherein the thin film has an optical characteristic that is sensitive to the ion-implantation. The apparatus further includes a light source for projecting a measuring beam onto the monitor substrate for generating a reflected light. The apparatus also includes a bare silicon substrate for measuring a full scale reflected light represented by I0 reflected from the bare silicon substrate with the light source projecting a full scale light onto the bare silicon substrate. The apparatus further has a light source control means for controlling the light source to project the full scale light onto a plurality of points on the monitor substrate before and after an ion implantation for obtaining reflection intensities I' and I''. The apparatus further includes an ion-implantation measurement controller for controlling the apparatus and for calculating the implantation energy and/or dosage from the reflected light from the monitor substrate and displaying implant profile data.
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申请公布号 |
US6900894(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20010991215 |
申请日期 |
2001.11.16 |
申请人 |
PROCESS DIAGNOSTICS, INC. |
发明人 |
MCMILLEN JAMES A.;GRUND EVAN |
分类号 |
G01N21/47;H01J37/317;(IPC1-7):G01N21/55 |
主分类号 |
G01N21/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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